Patents

ICREA selects researchers based solely on their scientific achievements. However, excellent science often leads to the invention of new and amazing technologies and solutions. When that happens, ICREA fully supports the exploitation of these opportunities.

Our ICREA research professors are working in different Universities and Research Centres. On account of this, ownership of any intellectual or industrial property is always shared between ICREA and the host institution. To make negotiations as fast and conclusive as possible, host institutions are entitled to explore and engage in technology transfer activities on behalf of ICREA when opportunities arise. ICREA supports the exploitation efforts and offers advice throughout the process.

Please have a look at our current technologies and contact ICREA to learn more about them.

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  • Experimental Sciences & Mathematics
    Preparation of uniform nano-sized solid materials by continuous precipitation

    Javier Pérez-Ramírez, Sònia Abelló Cros, Marta Santiago Redondo
    Institut Català d'Investigació Química

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    Preparation of uniform nano-sized solid materials by continuous precipitation

    Javier Pérez-Ramírez, Sònia Abelló Cros, Marta Santiago Redondo
    Institut Català d'Investigació Química

    A process for the prepn. of nano-sized solid materials with a uniform particle size and a uniform pore size distribution includes the continuous pptn. under const. temp., const. pH and fixed residence time, in a stirred reaction chamber simultaneously fed with at least two solns. The reaction chamber is a microreactor and the pH of the reaction mixt. is controlled by the flow of the feeding solns. Also, hydrotalcites, dawsonites and aluminas with specific morphol., size distribution and pore size which can be prepd. by this process. The prepd. materials can be used in catalysts. The prepd. hydrotalcites can be used in ceramic films or in nanolithog. processing.

    Filing date: 23 Jun, 2006

    EP06115928 - PCT/EP2007/056228 - WO2007147881

  • Life & Medical Sciences
    Compounds for the prevention or treatment of X linked adrenoleukodystrophy

    Aurora Pujol
    Institut d'Investigació Biomèdica de Bellvitge

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    Compounds for the prevention or treatment of X linked adrenoleukodystrophy

    Aurora Pujol
    Institut d'Investigació Biomèdica de Bellvitge

    Compounds for the prevention or treatment of X linked adrenoleukodystrophy: 2-Propylpentanoic acid (valproic acid) and its monosodium salt are useful orally for the prevention and/or treatment of X linked adrenoleukodystrophy (X-ALD) in human, for both phenotypes: adrenomyeloneuropathy and cerebral childhood adrenoleukodystrophy, alone or in combination with other substances. Valproic acid increases ABCD2 gene expression levels, not only in human cell lines, but also in rat and human neural tissue, and in peripheral mononuclear cells of X-ALD patients. As valproic acid is an excellently examined active pharmaceutical ingredient in terms of toxicology, side effects and dose, and it has already been in clinical use for more than three decades, the present invention provides a new agent for the prevention or treatment of a so-far fatal disease. Currently, we are considering the possibility of reformulate the patent with a cocktail containing VPA and antioxidant compounds, as derived from experimental work on progress.

    Filing date: 11 May, 2006

    Licenced date: 31 Dec, 2012

    P200601202

  • Engineering Sciences
    Synchronously-Pumped Optical parametric Oscillator Tunable in the Visible and Ultraviolet

    M. Ebrahim-Zadeh
    Institut de Ciències Fotòniques

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    Synchronously-Pumped Optical parametric Oscillator Tunable in the Visible and Ultraviolet

    M. Ebrahim-Zadeh
    Institut de Ciències Fotòniques

    A novel synchronously-pumped optical parametric oscillator (OPO) driven by the second harmonic output of a mode-locked Ti:sapphire laser generates femtosecond and picosecond pulses with wide tunability in the visible and ultraviolet spectrum. The OPO uses bismuth triborate, BiB3O6 (or BIBO), as the nonlinear gain crystal. Using collinear critical phase-matching and simple crystal rotation at room temperature, a continuous tuning range from 480 to 710 nm is achieved with a single BIBO crystal and a single set of mirrors for the OPO cavity. The OPO generates up to 300 mW of average power across the available tuning range and can deliver femtrosecond or picosecond pulses, depending on the configuration of the mode-locked Ti:sapphire laser. Frequency doubling of the visible signal pulses from the OPO is also achieved in beta-BaB2O4 crystal, external and internal to the OPO resonator, providing femtosecond and picosecond pulses with wide tunability in the 240 to 355 nm in the ultraviolet at average powers of up to 50 mW. The major applications market for this source are currently in biophotnics, particularly molecular detection, microscopy, and time-domain spectroscopy.

    Filing date: 4 May, 2006

    Licenced date: 29 Mar, 2006

    0609599-6 (UK)

  • Engineering Sciences
    Procedimiento para la fabricación de un artículo con zonas ferromagnéticas y zonas no ferromagnéticas

    Jordi Sort, Amadeu Concustell, Enric Menéndez, Santiago Suriñach, Maria Dolors Baró i Josep Nogués
    Universitat Autònoma de Barcelona

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    Procedimiento para la fabricación de un artículo con zonas ferromagnéticas y zonas no ferromagnéticas

    Jordi Sort, Amadeu Concustell, Enric Menéndez, Santiago Suriñach, Maria Dolors Baró i Josep Nogués
    Universitat Autònoma de Barcelona

    Process to enhance the coercivity of magnetic materials based on ferromagnetic-antiferromagentic coupling. Applications in hard magnets.

    Filing date: 17 Feb, 2006

    P200600426

  • Experimental Sciences & Mathematics
    Procedimiento para la obtención de patrones en un sustrato orgánico conductor y del material de naturaleza orgánica así obtenido.

    Jaume Veciana Elena E. Laukhina Marta Mas-Torrent Vladimir Laukhin Concepció Rovira Caitriona M. Creely Dmitri V. Petrov
    Institut de Ciències Fotòniques

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    Procedimiento para la obtención de patrones en un sustrato orgánico conductor y del material de naturaleza orgánica así obtenido.

    Jaume Veciana Elena E. Laukhina Marta Mas-Torrent Vladimir Laukhin Concepció Rovira Caitriona M. Creely Dmitri V. Petrov
    Institut de Ciències Fotòniques

    La presente invención se refiere a un procedimiento químico que permite de manera directa el diseño de un patrón sobre un sustrato orgánico con propiedades conductoras de tipo semiconductoras, superconductoras o metálicas. La invención también se refiere al material de naturaleza orgánica así obtenido para su aplicación en dispositivos electrónicos tales como resistencias, condensadores, transistores, sensores o electrodos entre los más habituales, u otras aplicaciones en las que sea preciso un patrón determinado de zonas conductoras o semiconductoras respecto zonas menos conductoras o no conductoras o aislantes.

    Filing date: 29 Jul, 2005

    ES2272172 - PCT/ES2006/07118 - WO2007/014975

  • Engineering Sciences
    Procedimiento para la obtención de patrones en un sustrato orgánico conductor y material de naturaleza orgánica así obtenido.

    Jaume Veciana Miró, Concepció Rovira Angulo, Elena E. Laukhina, Marta Mas Torrent, Vladimir Laukhin, Dmitri V. Petrov y Caitriona M. Creely
    Institució Catalana de Recerca i Estudis Avançats

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    Procedimiento para la obtención de patrones en un sustrato orgánico conductor y material de naturaleza orgánica así obtenido.

    Jaume Veciana Miró, Concepció Rovira Angulo, Elena E. Laukhina, Marta Mas Torrent, Vladimir Laukhin, Dmitri V. Petrov y Caitriona M. Creely
    Institució Catalana de Recerca i Estudis Avançats

    La presente invención se refiere a un procedimiento químico que permite de manera directa el diseño de un patrón sobre un sustrato orgánico con propiedades conductoras de tipo semiconductoras, superconductoras o metálicas. La invención también se refiere al material de naturaleza orgánica así obtenido para su aplicación en dispositivos electrónicos tales como resistencias, condensadores, transistores, sensores o electrodos entre los más habituales, u otras aplicaciones en las que sea preciso un patrón determinado de zonas conductoras o semiconductoras respecto zonas menos conductoras o no conductoras o aislantes.

    Filing date: 29 Jul, 2005

    WO2007014975-A1; ES2272172-A1; ES2272172-B1; EP1919006-A1; CN101317281-A; JP2009509317-W; CA2617110-A1; US2009302279-A1