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When Disorder Unlocks: Delocalization and Quantum Geometry in Magic-Angle Graphene

Roche, Stephan (ICN2)

Engineering Sciences

Magic-angle twisted bilayer graphene (MATBG) hosts ultra-flat moiré bands that enable a remarkable landscape of correlated phases, including unconventional superconductivity. Yet every real device carries a degree of unavoidable disorder—charge puddles, strain, substrate inhomogeneity—so a central question remains: how robust are these exotic states once realistic imperfections are accounted for?To address this head-on, we performed large-scale quantum-transport simulations using a realistic tight-binding model of MATBG, allowing us to track how disorder reshapes transport length scales within and beyond the flat-band window. We uncover a striking, counter-intuitive regime: inside the flat bands, the mean free path can increase as disorder is enhanced, revealing a disorder-induced delocalization mechanism that sharply contrasts with the conventional monotonic degradation expected at higher energies. Importantly, this transport anomaly is mirrored by a disorder-dependent quantum metric—a quantum-geometric marker tied to ground-state localization—indicating that even “weak” disorder can significantly renormalize quantum-geometric ingredients that are widely discussed as key to MATBG superconductivity and related correlated phenomena.For experiments, the message is practical and testable: disorder should not be treated only as a nuisance, but as a parameter with a distinct flat-band fingerprint. Our results offer a quantitative route to rationalize device-to-device variability and motivate targeted protocols—energy/filling-resolved transport mapping while systematically tuning the disorder landscape via dielectric environment, screening, and substrate choice—to capture the predicted non-monotonic trend and the crossover back to standard localization at stronger disorder.

Total density of states of MATBLG for three cases: clean (solid line) and with disorder of strength W = 3γ₀/4 (dashed) and W = 3γ₀/2 (dotted). Left inset: in the clean system at charge neutrality, the local density of states peaks in the AA moiré regions (darker areas); blue arrows mark the moiré unit-cell vectors. Right inset: band structure showing the flat bands around E = 0.

Diffusion coefficient versus time for clean MATBLG at five energies: −100 meV (blue), −50 meV (yellow), 0 meV / charge neutrality (red), +50 meV (green), and +100 meV (purple). The inset shows the Fermi velocity as a function of energy (solid line), plotted together with the clean-system DOS (dotted line, rescaled for easier comparison).

Mean free paths (main panel) and projected local density of states (insets) for various Anderson strengths, evidencing the anomalous enhancement of conduction for low disorder (due to moiré localization disruption).


REFERENCIA

Guerrero PA, Nguyen VH, Romeral JM, Cummings AW, Garcia JH, Charlier JC & Roche S
Physical Review Letters 134 - 12, 126301