A quantum dot population comprising INSB quantum dots, a method for obtaining the quantum dot population and an optoelectronic device comprising the quantum dot population

The present invention relates to a quantum dot population comprising InSb quantum dots, wherein the InSb quantum dots have a core-shell structure, wherein in the core-shell structure the core is made of InSb and the shell is made of InP, the InP shell being made and arranged to passivate trap states, suppressSb oxidation, and minimize interface dangling bonds of Sb to reduce surface defects, wherein less than 10% of Sb present in each quantum dot is oxidized. The present invention also relates to a method for obtaining the quantum dot population of the invention, and to an optoelectronic device comprising the quantum dot population.