A quantum dot population comprising metal chalcogenide quantum dots, a method for obtaining the quantum dot population and an optoelectronic device comprising the quantum dot population

The current progress of modern technologies such as autonomous driving, augmented reality, optical communications, bioimaging, surveillance, spectroscopy, etc., has increased enormous demand on high performing and costefective Infrared (IR) optoelectronic materials [1‑8]. The existing technology for IR optoelectronic materials mainly depends on epitaxially grown semiconductors for example InGaAs orGe; however, this enhances their cost and limits their integration on custom grade silicon circuit.The present invention generally relates:In a frst aspect, to a quantum dot population comprising metal chalcogenide quantum dots comprising metal thiolate ligands.A second aspect of the present invention relates to a method for obtaining the quantum dot population of the frst aspect of the present invention.A third aspect of the present invention relates to an optoelectronic device comprising the quantum dot population of the frst aspect of the present invention.